RENESAS NP90N04VDK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP90N04VDK-E1-AY

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Specifications

Gate Charge(Qg)102nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)800pF
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation147W
Reverse Transfer Capacitance (Crss@Vds)360pF
RDS(on)2.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.85nF
TypeN-Channel

Technical details

40V 2.5V 147W 2.8mΩ@10V 1 N-channel N-Channel TO-252(MP-3ZP) Single FETs, MOSFETs RoHS

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