RENESAS · FETs & Power MOSFETs · MPN NP83P06PDG-E1-AY
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| Gate Charge(Qg) | 190nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 83A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.8W;150W |
| RDS(on) | 8.8mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 10.1nF |
60V 83A 8.8mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS