RENESAS NP83P06PDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP83P06PDG-E1-AY

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Specifications

Gate Charge(Qg)190nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)83A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation1.8W;150W
RDS(on)8.8mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)10.1nF

Technical details

60V 83A 8.8mΩ@10V 1 P-Channel TO-263 Single FETs, MOSFETs RoHS

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