RENESAS NP83P04PDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP83P04PDG-E1-AY

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Specifications

Gate Charge(Qg)200nC@32V
Drain to Source Voltage40V
Output Capacitance(Coss)1.5nF
Current - Continuous Drain(Id)83A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)850pF
RDS(on)8mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)9.82nF
TypeP-Channel

Technical details

40V 83A 2.5V 150W 8mΩ@4.5V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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