RENESAS NP75P04YLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP75P04YLG-E1-AY

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Specifications

Gate Charge(Qg)140nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)75A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)450pF
RDS(on)14mΩ@5V
Number1 P-Channel
Input Capacitance(Ciss)4.8nF
TypeP-Channel

Technical details

40V 75A 2.5V 138W 14mΩ@5V 1 P-Channel P-Channel HSON-8 Single FETs, MOSFETs RoHS

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