RENESAS NP75P03YDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP75P03YDG-E1-AY

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)141nC@10V
Output Capacitance(Coss)990pF
Current - Continuous Drain(Id)75A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation138W
Reverse Transfer Capacitance (Crss@Vds)700pF
RDS(on)6.2mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)4.8nF
TypeP-Channel

Technical details

30V 75A 2.5V 138W 6.2mΩ@10V 1 P-Channel P-Channel HSON-8 Single FETs, MOSFETs RoHS

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