RENESAS NP70N04MUG-S18-AY

RENESAS · FETs & Power MOSFETs · MPN NP70N04MUG-S18-AY

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)-
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)310pF
RDS(on)5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)4.9nF
TypeN-Channel

Technical details

40V 4V 5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS

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