RENESAS · FETs & Power MOSFETs · MPN NP60N06VDK-E1-AY
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 56nC@10V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 105W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 7.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.6nF |
| Type | N-Channel |
60V 60A 2.5V 105W 7.9mΩ@10V 1 N-channel N-Channel TO-252(MP-3ZP) Single FETs, MOSFETs RoHS