RENESAS · FETs & Power MOSFETs · MPN NP60N055VUK-E1-AY
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.2W;105W |
| RDS(on) | 5.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.75nF |
55V 60A 4V 5.5mΩ@10V 1 N-channel TO-252-3 Single FETs, MOSFETs RoHS