RENESAS NP60N04VLK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP60N04VLK-E1-AY

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Specifications

Gate Charge(Qg)63nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)510pF
Current - Continuous Drain(Id)60A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation105W
Reverse Transfer Capacitance (Crss@Vds)260pF
RDS(on)3.9mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.68nF
TypeN-Channel

Technical details

40V 60A 2.5V 105W 3.9mΩ@10V 1 N-channel N-Channel TO-252(MP-3ZP) Single FETs, MOSFETs RoHS

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