RENESAS NP50P04SLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP50P04SLG-E1-AY

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Specifications

Gate Charge(Qg)150nC@32V
Drain to Source Voltage40V
Output Capacitance(Coss)1.12nF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation84W
Reverse Transfer Capacitance (Crss@Vds)905pF
RDS(on)15mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)5.7nF
TypeP-Channel

Technical details

40V 50A 2.5V 84W 15mΩ@4.5V 1 P-Channel P-Channel TO-252(MP-3ZK) Single FETs, MOSFETs RoHS

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