RENESAS · FETs & Power MOSFETs · MPN NP50P03YDG-E1-AY
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| Gate Charge(Qg) | 96nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 660pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 102W |
| Reverse Transfer Capacitance (Crss@Vds) | 580pF |
| RDS(on) | 8.4mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.5nF |
| Type | P-Channel |
30V 50A 2.5V 102W 8.4mΩ@10V 1 P-Channel P-Channel HSON-8 Single FETs, MOSFETs RoHS