RENESAS NP50N04YUK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP50N04YUK-E1-AY

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)57nC
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation97W
Reverse Transfer Capacitance (Crss@Vds)240pF
RDS(on)4.8mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.2nF
TypeN-Channel

Technical details

40V 50A 4V 97W 4.8mΩ@10V 1 N-channel N-Channel HSON-8(5x5.4) Single FETs, MOSFETs RoHS

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