RENESAS NP40N055KHE-E1-AZ

RENESAS · FETs & Power MOSFETs · MPN NP40N055KHE-E1-AZ

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Specifications

Drain to Source Voltage55V
Gate Charge(Qg)35nC@10V
Output Capacitance(Coss)280pF
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation66W
RDS(on)23mΩ@10V
Reverse Transfer Capacitance (Crss@Vds)180pF
Input Capacitance(Ciss)1.61nF
TypeN-Channel

Technical details

55V 40A 4V 66W 23mΩ@10V N-Channel Single FETs, MOSFETs RoHS

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