RENESAS NP36P06SLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP36P06SLG-E1-AY

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)52nC@10V
Output Capacitance(Coss)350pF
Current - Continuous Drain(Id)36A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation1.2W;56W
Reverse Transfer Capacitance (Crss@Vds)205pF
RDS(on)30mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)3.2nF
TypeP-Channel

Technical details

60V 36A 2V 30mΩ@10V 1 P-Channel P-Channel TO-252 Single FETs, MOSFETs RoHS

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