RENESAS · FETs & Power MOSFETs · MPN NP36P06KDG-E1-AY
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| Output Capacitance(Coss) | 350pF |
|---|---|
| Pd - Power Dissipation | 1.8W;56W |
| Configuration | - |
| Gate Charge(Qg) | 54nC@10V |
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 36A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.6V |
| Reverse Transfer Capacitance (Crss@Vds) | 205pF |
| RDS(on) | 29.5mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.1nF |
60V 36A 1.6V 29.5mΩ@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS