RENESAS NP36P04KDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP36P04KDG-E1-AY

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Output Capacitance(Coss)450pF
Current - Continuous Drain(Id)36A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation56W
Reverse Transfer Capacitance (Crss@Vds)280pF
RDS(on)23.5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2.8nF
TypeP-Channel

Technical details

40V 36A 2.5V 56W 23.5mΩ@4.5V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS

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