RENESAS · FETs & Power MOSFETs · MPN NP35N055YUK-E1-AY
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| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 97W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 6.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.36nF |
| Type | N-Channel |
55V 35A 4V 97W 6.7mΩ@10V 1 N-channel N-Channel HSON-8 Single FETs, MOSFETs RoHS