RENESAS · FETs & Power MOSFETs · MPN NP35N04YUG-E1-AY
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| Gate Charge(Qg) | 54nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 35A |
| Operating Temperature - | -40℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1W;77W |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.85nF |
40V 35A 4V 10mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS