RENESAS NP35N04YLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP35N04YLG-E1-AY

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)51nC@10V
Output Capacitance(Coss)290pF
Current - Continuous Drain(Id)35A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation77W
Reverse Transfer Capacitance (Crss@Vds)220pF
RDS(on)15mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)2.85nF
TypeN-Channel

Technical details

40V 35A 2.5V 77W 15mΩ@5V 1 N-channel N-Channel HSON-8 Single FETs, MOSFETs RoHS

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