RENESAS · FETs & Power MOSFETs · MPN NP33N06YDG-E1-AY
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 78nC@10V |
| Current - Continuous Drain(Id) | 33A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1W;97W |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.9nF |
60V 33A 2.5V 14mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS