RENESAS NP30N06QDK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP30N06QDK-E1-AY

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Specifications

Current - Continuous Drain(Id)30A
RDS(on)21mΩ@4.5V
Pd - Power Dissipation59W
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF
Input Capacitance(Ciss)2.25nF
Gate Charge(Qg)38nC@10V
Operating Temperature-
Output Capacitance(Coss)240pF

Technical details

30A 21mΩ@4.5V 59W 2.5V HSON-8(5x5.4) FET, MOSFET Arrays RoHS

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