RENESAS NP30N04QUK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP30N04QUK-E1-AY

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation59W
RDS(on)8mΩ@10V
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)160pF
Number2 N-Channel
Input Capacitance(Ciss)2.4nF
Gate Charge(Qg)41nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)330pF

Technical details

30A 59W 8mΩ@10V 4V 2 N-Channel HSON-8(5x5.4) FET, MOSFET Arrays RoHS

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