RENESAS · FETs & Power MOSFETs · MPN NP29N06QUK-E1-AY
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| Current - Continuous Drain(Id) | 30A |
|---|---|
| Pd - Power Dissipation | 44W |
| RDS(on) | 21mΩ@10V |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Drain to Source Voltage | 60V |
| Type | N-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 130pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.5nF |
| Gate Charge(Qg) | 30nC@10V |
| Operating Temperature | -55℃~+175℃ |
| Output Capacitance(Coss) | 230pF |
30A 44W 21mΩ@10V 4V 2 N-Channel HSON-8(5x5.4) FET, MOSFET Arrays RoHS