RENESAS NP29N06QDK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP29N06QDK-E1-AY

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation44W
RDS(on)20mΩ@10V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)90pF
Number2 N-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)24nC@10V
Operating Temperature-40℃~+175℃
Output Capacitance(Coss)170pF

Technical details

30A 44W 20mΩ@10V 2.5V 2 N-Channel HSON-8(5x5.4) FET, MOSFET Arrays RoHS

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