RENESAS NP29N04QUK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP29N04QUK-E1-AY

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Specifications

Current - Continuous Drain(Id)30A
Pd - Power Dissipation44W
RDS(on)10.1mΩ@10V
Gate Threshold Voltage (Vgs(th))4V
Drain to Source Voltage40V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)130pF
Number2 N-Channel
Input Capacitance(Ciss)1.5nF
Gate Charge(Qg)29nC@10V
Operating Temperature-
Output Capacitance(Coss)230pF

Technical details

30A 44W 10.1mΩ@10V 4V 2 N-Channel HSON-8(5x5.4) FET, MOSFET Arrays RoHS

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