RENESAS NP23N06YDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP23N06YDG-E1-AY

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)41nC@10V
Current - Continuous Drain(Id)23A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation1W;60W
RDS(on)27mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.8nF

Technical details

60V 23A 2.5V 27mΩ@10V 1 N-channel HSON-8 Single FETs, MOSFETs RoHS

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