RENESAS NP20P06YLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP20P06YLG-E1-AY

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Specifications

Gate Charge(Qg)51nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)225pF
Current - Continuous Drain(Id)20A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation57W
Reverse Transfer Capacitance (Crss@Vds)173pF
RDS(on)47mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)2.407nF
TypeP-Channel

Technical details

60V 20A 2.5V 57W 47mΩ@10V 1 P-Channel P-Channel HSON-8 Single FETs, MOSFETs RoHS

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