RENESAS NP20P04SLG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP20P04SLG-E1-AY

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Specifications

Gate Charge(Qg)34nC@32V
Drain to Source Voltage40V
Current - Continuous Drain(Id)20A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation38W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)38mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.65nF
TypeP-Channel

Technical details

40V 20A 2.5V 38W 38mΩ@4.5V 1 P-Channel P-Channel TO-252(MP-3ZK) Single FETs, MOSFETs RoHS

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