RENESAS NP180N04TUG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP180N04TUG-E1-AY

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)390nC@10V
Output Capacitance(Coss)2.13nF
Current - Continuous Drain(Id)180A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation288W
Reverse Transfer Capacitance (Crss@Vds)1.61nF
RDS(on)1.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)25.7nF
TypeN-Channel

Technical details

40V 180A 4V 288W 1.5mΩ@10V 1 N-channel N-Channel TO-263-6 Single FETs, MOSFETs RoHS

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