RENESAS · FETs & Power MOSFETs · MPN NP16N06YLL-E1-AY
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| Gate Charge(Qg) | 18nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 130pF |
| Current - Continuous Drain(Id) | 16A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 27.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 35mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
60V 16A 1.5V 27.3W 35mΩ@10V 1 N-channel N-Channel HSON-8(5x5.4) Single FETs, MOSFETs RoHS