RENESAS NP16N06QLK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP16N06QLK-E1-AY

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Specifications

Current - Continuous Drain(Id)16A
Pd - Power Dissipation25W
RDS(on)60mΩ@4.5V
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)54pF
Number2 N-Channel
Input Capacitance(Ciss)750pF
Gate Charge(Qg)17nC@10V
Operating Temperature-55℃~+175℃
Output Capacitance(Coss)75pF

Technical details

16A 25W 60mΩ@4.5V 2.5V 2 N-Channel HSON-8(5x5.4) FET, MOSFET Arrays RoHS

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