RENESAS NP110N04PUK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP110N04PUK-E1-AY

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Specifications

Gate Charge(Qg)297nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)2.4nF
Current - Continuous Drain(Id)110A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation348W
Reverse Transfer Capacitance (Crss@Vds)980pF
RDS(on)1.4mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)15.75nF
TypeN-Channel

Technical details

40V 110A 4V 348W 1.4mΩ@10V 1 N-channel N-Channel TO-263-3 Single FETs, MOSFETs RoHS

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