RENESAS · FETs & Power MOSFETs · MPN NP109N055PUK-E1-AY
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| Gate Charge(Qg) | 189nC@10V |
|---|---|
| Drain to Source Voltage | 55V |
| Output Capacitance(Coss) | 1.16nF |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 490pF |
| RDS(on) | 2.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.25nF |
| Type | N-Channel |
55V 110A 4V 250W 2.2mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS