RENESAS · FETs & Power MOSFETs · MPN NP109N04PUK-E1-AY
No reviews yet — be the first to review RENESAS NP109N04PUK-E1-AY.
| Gate Charge(Qg) | 189nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 110A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.8W;250W |
| RDS(on) | 1.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 10.8nF |
40V 110A 4V 1.75mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS