RENESAS · FETs & Power MOSFETs · MPN NP100P06PDG-E1-AY
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| Gate Charge(Qg) | 300nC |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 200W |
| Reverse Transfer Capacitance (Crss@Vds) | 840pF |
| RDS(on) | 7.8mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 15nF |
| Type | P-Channel |
P-Channel 60V 100A 200W Surface Mount TO-263