RENESAS NP100P04PDG-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP100P04PDG-E1-AY

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)320nC@32V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation200W
Reverse Transfer Capacitance (Crss@Vds)1.13nF
RDS(on)5.1mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)15.1nF
TypeP-Channel

Technical details

P-Channel 40V 100A 200W Surface Mount TO-263

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