RENESAS NP100N04PUK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN NP100N04PUK-E1-AY

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Specifications

Drain to Source Voltage40V
Gate Charge(Qg)120nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --40℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation176W
Reverse Transfer Capacitance (Crss@Vds)490pF
RDS(on)2.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.05nF
TypeN-Channel

Technical details

40V 100A 4V 176W 2.3mΩ@10V 1 N-channel N-Channel TO-263 Single FETs, MOSFETs RoHS

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