RENESAS NE5550979A-T1-A

RENESAS · FETs & Power MOSFETs · MPN NE5550979A-T1-A

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Specifications

Drain to Source Voltage37V
Current - Continuous Drain(Id)3A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation25W

Technical details

37V 3A 2.25V 25W Single FETs, MOSFETs RoHS

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