RENESAS NE5550779A-T1A-A

RENESAS · FETs & Power MOSFETs · MPN NE5550779A-T1A-A

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)2.1A
Gate Threshold Voltage (Vgs(th))2.25V
Pd - Power Dissipation17.8W

Technical details

30V 2.1A 2.25V 17.8W RF FETs, MOSFETs RoHS

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