RENESAS · FETs & Power MOSFETs · MPN NE3511S02-T1C-A
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 4V |
| Current - Continuous Drain(Id) | 20mA |
| Operating Temperature - | -65℃~+125℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.7V |
| Pd - Power Dissipation | 165mW |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | - |
| Number | - |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
4V 20mA 1.7V 165mW N-Channel SMD-4P Single FETs, MOSFETs RoHS