RENESAS · FETs & Power MOSFETs · MPN N0604N-S19-AY
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| Gate Charge(Qg) | 75nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 310pF |
| Current - Continuous Drain(Id) | 82A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 116W |
| Reverse Transfer Capacitance (Crss@Vds) | 165pF |
| RDS(on) | 6.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.15nF |
| Type | N-Channel |
60V 82A 4V 116W 6.5mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs RoHS