RENESAS · FETs & Power MOSFETs · MPN N0602N-S19-AY
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| Gate Charge(Qg) | 133nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 560pF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 156W |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF |
| RDS(on) | 4.6mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.73nF |
| Type | N-Channel |
60V 100A 2V 156W 4.6mΩ@10V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs RoHS