RENESAS N0601N-ZK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN N0601N-ZK-E1-AY

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)133nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Pd - Power Dissipation1.5W;156W
RDS(on)4.2mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.73nF

Technical details

60V 100A 4.2mΩ@10V 1 N-channel TO-263 Single FETs, MOSFETs RoHS

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