RENESAS N0439N-S19-AY

RENESAS · FETs & Power MOSFETs · MPN N0439N-S19-AY

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage40V
Current - Continuous Drain(Id)90A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation1.8W;147W
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.9nF

Technical details

40V 90A 4V 3.3mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS

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