RENESAS · FETs & Power MOSFETs · MPN N0436N-ZK-E1-AY
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| Gate Charge(Qg) | 62nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 56A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 87.4W |
| Reverse Transfer Capacitance (Crss@Vds) | 195pF |
| RDS(on) | 4.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.2nF |
| Type | N-Channel |
40V 56A 4V 87.4W 4.7mΩ@10V 1 N-channel N-Channel TO-252 Single FETs, MOSFETs RoHS