RENESAS N0413N-ZK-E1-AY

RENESAS · FETs & Power MOSFETs · MPN N0413N-ZK-E1-AY

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Specifications

Gate Charge(Qg)100nC@10V
Drain to Source Voltage40V
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Pd - Power Dissipation1.5W;119W
RDS(on)3.3mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)5.55nF

Technical details

40V 100A 3.3mΩ@10V 1 N-channel TO-263(D2PAk) Single FETs, MOSFETs RoHS

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