RENESAS · FETs & Power MOSFETs · MPN N0412N-S19-AY
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| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 1.5W;119W |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.55nF |
40V 100A 3.7mΩ@10V 1 N-channel TO-220 Single FETs, MOSFETs RoHS