RENESAS · FETs & Power MOSFETs · MPN N0301N-T1-AT
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10nC@24V |
| Current - Continuous Drain(Id) | 4.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.3W |
| RDS(on) | 36mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 400pF |
30V 4.5A 1V 1.3W 36mΩ@10V 1 N-channel Single FETs, MOSFETs RoHS