RENESAS HFA3127RZ96

RENESAS · Transistors (BJTs) · MPN HFA3127RZ96

No reviews yet — be the first to review RENESAS HFA3127RZ96.

Specifications

Current - Collector Cutoff10nA
Emitter-Base Voltage(Vebo)6V
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
DC Current Gain40
Operating Temperature-55℃~+125℃
Current - Collector(Ic)65mA
Transition frequency(fT)8GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number5 NPN

Technical details

12V 150mW 40 65mA NPN QFN-16(3x3) Bipolar RF Transistors RoHS

Related Transistors (BJTs)