RENESAS HFA3046BZ

RENESAS · Transistors (BJTs) · MPN HFA3046BZ

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Specifications

Current - Collector Cutoff10nA
Emitter-Base Voltage(Vebo)6V
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation150mW
DC Current Gain130
Current - Collector(Ic)34mA
Operating Temperature-55℃~+125℃
Transition frequency(fT)8GHz
Vce Saturation(VCE(sat))500mV
typeNPN
Number5 NPN

Technical details

Bipolar (BJT) Transistor NPN 12V 34mA 8GHz 0.15W Surface Mount SOIC-14

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